منابع مشابه
InAs Photodiodes for 3.43 μm Radiation Thermometry
We report an evaluation of an epitaxially grown uncooled InAs photodiode for the use in radiation thermometry. Radiation thermometry measurements was taken using the photodiode covered blackbody temperatures of 50 °C–300 °C. By determining the photocurrent and signal-to-noise ratio, the temperature error of the measurements was deduced. It was found that an uncooled InAs photodiode, with the pe...
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ژورنال
عنوان ژورنال: Journal of Industrial & Engineering Chemistry
سال: 1921
ISSN: 0095-9014,1943-2968
DOI: 10.1021/ie50141a030